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FQNL2N50BTA

FQNL2N50BTA

POWER FIELD-EFFECT TRANSISTOR, 0

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FQNL2N50BTA

FQNL2N50BTA

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Part No :

FQNL2N50BTA

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 0
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQNL2N50BTA PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
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