MOSFET N-CH 60V 20A TO220AB
Type | Description |
---|---|
Series: | STripFET™ II |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 70mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5 nC @ 10 V |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP1045UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 4A SOT23 T&R 3 |
|
G3R75MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-3 |
|
BUK662R7-55C,118Rochester Electronics |
PFET, 120A I(D), 55V, 0.0044OHM, |
|
BUK956R1-100E,127Rochester Electronics |
MOSFET N-CH 100V 120A TO220AB |
|
AUIRFS8408TRRRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQB6N25TMRochester Electronics |
MOSFET N-CH 250V 5.5A D2PAK |
|
IPP60R520C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NTE2935NTE Electronics, Inc. |
MOSFET N-CH 500V 6.2A TO3PML |
|
XPN3R804NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 40A 8TSON |
|
FQI4N20TURochester Electronics |
MOSFET N-CH 200V 3.6A I2PAK |
|
IXTT1N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1A TO268 |
|
PMV28UNEARNexperia |
MOSFET N-CH 20V 4.7A TO236AB |