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BUK662R7-55C,118

BUK662R7-55C,118

PFET, 120A I(D), 55V, 0.0044OHM,

BUK662R7-55C,118

BUK662R7-55C,118

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Part No :

BUK662R7-55C,118

Manufacturer
Rochester Electronics
Description
PFET, 120A I(D), 55V, 0.0044OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10309 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
BUK662R7-55C,118 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:258 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:15.3 pF @ 25 V
FET Feature:-
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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