MOSFET P-CH 12V 4A SOT23 T&R 3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 31mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.8 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1357 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
G3R75MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-3 |
|
BUK662R7-55C,118Rochester Electronics |
PFET, 120A I(D), 55V, 0.0044OHM, |
|
BUK956R1-100E,127Rochester Electronics |
MOSFET N-CH 100V 120A TO220AB |
|
AUIRFS8408TRRRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQB6N25TMRochester Electronics |
MOSFET N-CH 250V 5.5A D2PAK |
|
IPP60R520C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NTE2935NTE Electronics, Inc. |
MOSFET N-CH 500V 6.2A TO3PML |
|
XPN3R804NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 40A 8TSON |
|
FQI4N20TURochester Electronics |
MOSFET N-CH 200V 3.6A I2PAK |
|
IXTT1N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1A TO268 |
|
PMV28UNEARNexperia |
MOSFET N-CH 20V 4.7A TO236AB |
|
SIUD401ED-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 500MA PPAK 0806 |