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R6020KNZ1C9

R6020KNZ1C9

MOSFET N-CH 600V 20A TO247

MPMS 006 0008 PH

MPMS 006 0008 PH

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R6020KNZ1C9

R6020KNZ1C9

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Part No :

R6020KNZ1C9

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 20A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10234 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
R6020KNZ1C9 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):231W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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