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IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

MOSFET N-CH 600V 19.3A TO220

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IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPAW60R280CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 19.3A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
538653 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
PDF
IPAW60R280CEXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack, Wide Creepage
Package / Case:TO-220-3 Full Pack, Variant
IPAW60R280CEXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPAW60R280CEXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPAW60R280CEXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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