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IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

MOSFET N-CH 600V 19.3A TO220

IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

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Part No :

IPAW60R280CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 19.3A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
538653 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPAW60R280CEXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack, Wide Creepage
Package / Case:TO-220-3 Full Pack, Variant
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