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FDN357N

FDN357N

MOSFET N-CH 30V 1.9A SUPERSOT3

FK25L

FK25L

FLAT SENSOR BETWEEN PACK PROBE

FDN357N

FDN357N

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Part No :

FDN357N

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 1.9A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18694 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FDN357N PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.9 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
FDN357N is available at GangBo-ic.com, Please review product page below for detailed information, including FDN357N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDN357N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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