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FDMS86150ET100

FDMS86150ET100

MOSFET N-CH 100V 16A POWER56

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FDMS86150ET100

FDMS86150ET100

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Part No :

FDMS86150ET100

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 16A POWER56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13145 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
PDF
FDMS86150ET100 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4065 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
FDMS86150ET100 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS86150ET100 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS86150ET100 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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