MOSFET N-CH 600V 21A TO220-3
72-FIBER OM4 10 GBE MULTIMODE NO
SOC DIGITAL GATEWAY
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 165mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs: | 52 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 192W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF644STRLPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
SIHS90N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 87A SUPER247 |
|
RJK4006DPD-00#J2Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NTLJS3A18PZTWGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
FQP5N30Rochester Electronics |
MOSFET N-CH 300V 5.4A TO220-3 |
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
2N7002KW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-323 |
|
FQAF44N10Rochester Electronics |
MOSFET N-CH 100V 33A TO3PF |
|
FDS6299SRochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
TK6P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.8A DPAK |
|
NTB6411ANGRochester Electronics |
MOSFET N-CH 100V 77A D2PAK |
|
SI5419DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |
|
SQJ486EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 75V 30A PPAK SO-8 |