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NTLJS3A18PZTWG

NTLJS3A18PZTWG

MOSFET P-CH 20V 5A 6WDFN

IDT71V35761SA183BQ8

IDT71V35761SA183BQ8

IC SRAM 4.5MBIT PAR 165CABGA

NTLJS3A18PZTWG

NTLJS3A18PZTWG

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Part No :

NTLJS3A18PZTWG

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 5A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NTLJS3A18PZTWG PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2.24 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
NTLJS3A18PZTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NTLJS3A18PZTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTLJS3A18PZTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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