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RJK4006DPD-00#J2

RJK4006DPD-00#J2

POWER FIELD-EFFECT TRANSISTOR

RJK4006DPD-00#J2

RJK4006DPD-00#J2

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Part No :

RJK4006DPD-00#J2

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
33000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
RJK4006DPD-00#J2 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MP-3A
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RJK4006DPD-00#J2 is available at GangBo-ic.com, Please review product page below for detailed information, including RJK4006DPD-00#J2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RJK4006DPD-00#J2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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