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TK6P65W,RQ

TK6P65W,RQ

MOSFET N-CH 650V 5.8A DPAK

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TK6P65W,RQ

TK6P65W,RQ

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Part No :

TK6P65W,RQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 5.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11857 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
TK6P65W,RQ PDF
Type Description
Series:DTMOSIV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
TK6P65W,RQ is available at GangBo-ic.com, Please review product page below for detailed information, including TK6P65W,RQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK6P65W,RQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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