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BSC010N04LS6ATMA1

BSC010N04LS6ATMA1

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BSC010N04LS6ATMA1

BSC010N04LS6ATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC010N04LS6ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 40A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12590 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2025
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 20 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
BSC010N04LS6ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC010N04LS6ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC010N04LS6ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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