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RG2012N-1581-B-T5

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RES SMD 1.58K OHM 0.1% 1/8W 0805

IPB60R125CPATMA1

IPB60R125CPATMA1

MOSFET N-CH 600V 25A TO263-3

IPB60R125CPATMA1

IPB60R125CPATMA1

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Part No :

IPB60R125CPATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 25A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10404 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
IPB60R125CPATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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