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SQD10N30-330H_GE3

SQD10N30-330H_GE3

MOSFET N-CH 300V 10A TO252AA

SQD10N30-330H_GE3

SQD10N30-330H_GE3

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Part No :

SQD10N30-330H_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 300V 10A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10781 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SQD10N30-330H_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2190 pF @ 25 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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