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RM4P20ES6

RM4P20ES6

MOSFET P-CH 20V 3A/4.1A SOT23-6

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RM4P20ES6

RM4P20ES6

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Part No :

RM4P20ES6

Manufacturer
Rectron USA
Description
MOSFET P-CH 20V 3A/4.1A SOT23-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
768476 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 4 V
FET Feature:-
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
RM4P20ES6 is available at GangBo-ic.com, Please review product page below for detailed information, including RM4P20ES6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM4P20ES6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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