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APT29F100B2

APT29F100B2

MOSFET N-CH 1000V 30A T-MAX

54-CBSA-3.5X3.5X0.5

54-CBSA-3.5X3.5X0.5

RF SHIELD 3.5" X 3.5" T/H

APT29F100B2

APT29F100B2

Image is for reference, please contact us to get the real picture

Part No :

APT29F100B2

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET N-CH 1000V 30A T-MAX
Catalog
Transistors - FETs, MOSFETs - Single
Availability
887888 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
APT29F100B2 PDF
Type Description
Series:POWER MOS 8™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
APT29F100B2 is available at GangBo-ic.com, Please review product page below for detailed information, including APT29F100B2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APT29F100B2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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