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IXFN60N80P

IXFN60N80P

MOSFET N-CH 800V 53A SOT-227B

666K101-30-050

666K101-30-050

CBL RIBN 30COND 0.039 CLEAR 50'

IXFN60N80P

IXFN60N80P

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Part No :

IXFN60N80P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 800V 53A SOT-227B
Catalog
Transistors - FETs, MOSFETs - Single
Availability
897889 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IXFN60N80P PDF
Type Description
Series:PolarHV™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:18000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
IXFN60N80P is available at GangBo-ic.com, Please review product page below for detailed information, including IXFN60N80P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFN60N80P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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