MOSFET N-CH 800V 53A SOT-227B
CBL RIBN 30COND 0.039 CLEAR 50'
Type | Description |
---|---|
Series: | PolarHV™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 140mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 250 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 18000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1040W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD140N6F7STMicroelectronics |
MOSFET N-CH 60V 80A DPAK |
|
DMT3006LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
IRLZ24PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 17A TO220AB |
|
FDB8444TSRochester Electronics |
MOSFET N-CH 40V 20A/70A TO263-5 |
|
SQ4483EY-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 30A 8SOIC |
|
NDD01N60T4GRochester Electronics |
MOSFET N-CH 600V 1.5A DPAK |
|
BSH205G2RNexperia |
MOSFET P-CH 20V 2A TO236AB |
|
SIS890ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.6A/24.7A PPAK |
|
AON6522Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 71A/200A 8DFN |
|
SSP2N60ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM130NB06LCRTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 10A/51A 8PDFN |
|
SUP57N20-33-E3Vishay / Siliconix |
MOSFET N-CH 200V 57A TO220AB |
|
IRLML2060TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 1.2A SOT23 |