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TSM130NB06LCR

TSM130NB06LCR

MOSFET N-CH 60V 10A/51A 8PDFN

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TSM130NB06LCR

TSM130NB06LCR

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Part No :

TSM130NB06LCR

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 60V 10A/51A 8PDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN
TSM130NB06LCR is available at GangBo-ic.com, Please review product page below for detailed information, including TSM130NB06LCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM130NB06LCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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