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NDD01N60T4G

NDD01N60T4G

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Part No :

NDD01N60T4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 1.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13734 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NDD01N60T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:7.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
NDD01N60T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NDD01N60T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NDD01N60T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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