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ES6U1T2R

ES6U1T2R

MOSFET P-CH 12V 1.3A 6WEMT

ES6U1T2R

ES6U1T2R

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Part No :

ES6U1T2R

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 12V 1.3A 6WEMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
ES6U1T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Last Time Buy
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 6 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WEMT
Package / Case:SOT-563, SOT-666
ES6U1T2R is available at GangBo-ic.com, Please review product page below for detailed information, including ES6U1T2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ES6U1T2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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