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IRFD214

IRFD214

MOSFET N-CH 250V 450MA 4DIP

IRFD214

IRFD214

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Part No :

IRFD214

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 250V 450MA 4DIP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
567656 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 19 - Jan 23 2025
PDF
IRFD214 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRFD214 is available at GangBo-ic.com, Please review product page below for detailed information, including IRFD214 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD214 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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