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SIS406DN-T1-GE3

SIS406DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIS406DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 9A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
SIS406DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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