MOSFET N-CH 500V 24A TO268
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 230mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 160 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDC5661N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.3A SUPERSOT6 |
|
BUK6210-55C,118Nexperia |
MOSFET N-CH 55V 78A DPAK |
|
STP26N65DM2STMicroelectronics |
MOSFET N-CH 650V 20A TO220 |
|
SIS406DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |
|
IXTA32P20TWickmann / Littelfuse |
MOSFET P-CH 200V 32A TO263 |
|
FQU4N50TURochester Electronics |
MOSFET N-CH 500V 2.6A IPAK |
|
AOD4130Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 6.5A/30A TO252 |
|
IXFK360N10TWickmann / Littelfuse |
MOSFET N-CH 100V 360A TO264AA |
|
SIHG35N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 32A TO247AC |
|
IRLB8743PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 78A TO220AB |
|
NTD85N02RT4GRochester Electronics |
MOSFET N-CH 24V 12A/85A DPAK |
|
DMG4466SSSL-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10A 8SO |
|
FQPF2N70Rochester Electronics |
MOSFET N-CH 700V 2A TO220F |