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STP26N65DM2

STP26N65DM2

MOSFET N-CH 650V 20A TO220

STP26N65DM2

STP26N65DM2

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Part No :

STP26N65DM2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 20A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
617661 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 100 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
STP26N65DM2 is available at GangBo-ic.com, Please review product page below for detailed information, including STP26N65DM2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STP26N65DM2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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