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1808J0508P20BCR

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CAP CER 8.2PF 50V C0G/NP0 1808

RCD050N20TL

RCD050N20TL

MOSFET N-CH 200V 5A CPT3

RCD050N20TL

RCD050N20TL

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Part No :

RCD050N20TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 5A CPT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
487648 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
RCD050N20TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:618mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:-
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:CPT3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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