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SSM3J15FV,L3F

SSM3J15FV,L3F

MOSFET P-CH 30V 100MA VESM

SSM3J15FV,L3F

SSM3J15FV,L3F

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Part No :

SSM3J15FV,L3F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 30V 100MA VESM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
55859 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SSM3J15FV,L3F PDF
Type Description
Series:π-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9.1 pF @ 3 V
FET Feature:-
Power Dissipation (Max):150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:VESM
Package / Case:SOT-723
SSM3J15FV,L3F is available at GangBo-ic.com, Please review product page below for detailed information, including SSM3J15FV,L3F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM3J15FV,L3F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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