MOSFET N-CH 150V 203A TO247-3
Type | Description |
---|---|
Series: | StrongIRFET™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 203A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 4.6V @ 265µA |
Gate Charge (Qg) (Max) @ Vgs: | 200 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12000 pF @ 75 V |
FET Feature: | - |
Power Dissipation (Max): | 556W (Tc) |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK6D230-80EXNexperia |
MOSFET N-CH 80V 1.9A/5.1A 6DFN |
|
NVD5C464NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/59A DPAK |
|
DMN21D2UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 760MA 3DFN |
|
IRF6662TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.3A DIRECTFET |
|
RTR011P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.1A TSMT3 |
|
IPA50R140CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 23A TO220-FP |
|
STP24NF10STMicroelectronics |
MOSFET N-CH 100V 26A TO220AB |
|
IPW50R199CPFKSA1Rochester Electronics |
MOSFET N-CH 550V 17A TO247-3 |
|
NTD6415AN-1GRochester Electronics |
MOSFET N-CH 100V 23A IPAK |
|
APT12060LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |
|
EKI06051Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 85A TO220-3 |
|
BSC032N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/98A TDSON |
|
SSM3J353F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 2A S-MINI |