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IRF6662TRPBF

IRF6662TRPBF

MOSFET N-CH 100V 8.3A DIRECTFET

IRF6662TRPBF

IRF6662TRPBF

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Part No :

IRF6662TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 8.3A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10461 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRF6662TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
IRF6662TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6662TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6662TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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