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FDC637BNZ

FDC637BNZ

MOSFET N-CH 20V 6.2A SUPERSOT6

FDC637BNZ

FDC637BNZ

Image is for reference, please contact us to get the real picture

Part No :

FDC637BNZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 6.2A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
33672 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FDC637BNZ PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:895 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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