MOSFET N-CH 650V 25A TO220-FP
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1.1mA |
Gate Charge (Qg) (Max) @ Vgs: | 70 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMTH4007SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 15.7A PWRDI5060 |
|
SI1317DL-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 1.4A/1.4A SC70-3 |
|
IPD33CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 27A TO252-3 |
|
IPP040N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO220-3 |
|
STF11N50M2STMicroelectronics |
MOSFET N-CH 500V 8A TO220FP |
|
SUM90142E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 90A TO263 |
|
IRFR825TRPBFIR (Infineon Technologies) |
MOSFET N-CH 500V 6A DPAK |
|
NVMFS5C670NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
AUIRF7669L2TRIR (Infineon Technologies) |
MOSFET N-CH 100V 19A DIRECTFET |
|
TPH2R506PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
FDPF5N50NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220F |
|
FQP9N25CRochester Electronics |
MOSFET N-CH 250V 8.8A TO220-3 |
|
ISC026N03L5SATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 24A/100A TDSON |