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SI1317DL-T1-BE3

SI1317DL-T1-BE3

MOSFET P-CH 20V 1.4A/1.4A SC70-3

ISO7231CDWR

ISO7231CDWR

DGTL ISO 2500VRMS 3CH GP 16SOIC

SI1317DL-T1-BE3

SI1317DL-T1-BE3

Image is for reference, please contact us to get the real picture

Part No :

SI1317DL-T1-BE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 1.4A/1.4A SC70-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11860 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta), 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:272 pF @ 10 V
FET Feature:-
Power Dissipation (Max):400mW (Ta), 500mW (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3
Package / Case:SC-70, SOT-323
SI1317DL-T1-BE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI1317DL-T1-BE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI1317DL-T1-BE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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