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ISC026N03L5SATMA1

ISC026N03L5SATMA1

MOSFET N-CH 30V 24A/100A TDSON

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ISC026N03L5SATMA1

ISC026N03L5SATMA1

Image is for reference, please contact us to get the real picture

Part No :

ISC026N03L5SATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 24A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10150 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
ISC026N03L5SATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including ISC026N03L5SATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ISC026N03L5SATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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