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TPH2R506PL,L1Q

TPH2R506PL,L1Q

MOSFET N-CH 60V 100A 8SOP

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TPH2R506PL,L1Q

TPH2R506PL,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPH2R506PL,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 100A 8SOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
927392 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
TPH2R506PL,L1Q PDF
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id:2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5435 pF @ 30 V
FET Feature:-
Power Dissipation (Max):132W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
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