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IRLR3705ZPBF

IRLR3705ZPBF

HEXFET POWER MOSFET

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IGP20N60H3ATMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

IRLR3705ZPBF

IRLR3705ZPBF

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Part No :

IRLR3705ZPBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
476747 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRLR3705ZPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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