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IPT65R195G7XTMA1

IPT65R195G7XTMA1

MOSFET N-CH 650V 14A 8HSOF

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IPT65R195G7XTMA1

IPT65R195G7XTMA1

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Part No :

IPT65R195G7XTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 14A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11742 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPT65R195G7XTMA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:996 pF @ 400 V
FET Feature:-
Power Dissipation (Max):97W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-2
Package / Case:8-PowerSFN
IPT65R195G7XTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPT65R195G7XTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPT65R195G7XTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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