MOSFET P-CH 20V 650MA SOT523
JFET P-CH 30V 0.35W TO92
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 650mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 360mOhm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.2 nC @ 4.5 V |
Vgs (Max): | 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 100 pF @ 16 V |
FET Feature: | - |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPHR8504PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
STF6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A TO220FP |
|
SIHP23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO220AB |
|
TK4A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A TO220SIS |
|
IPW65R080CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 43.3A TO247-3 |
|
UJ3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
SPB11N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
FQP7N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO220-3 |
|
BSC886N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB FP |
|
IXTP130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220 |
|
SQM40041EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 120A TO263 |
|
FQD17P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |