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TK10V60W,LVQ

TK10V60W,LVQ

MOSFET N-CH 600V 9.7A 4DFN

CAB420RF-0200-A-1

CAB420RF-0200-A-1

CBL ASSY SMA-MHF4 7.874"

TK10V60W,LVQ

TK10V60W,LVQ

Image is for reference, please contact us to get the real picture

Part No :

TK10V60W,LVQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 9.7A 4DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
995899 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TK10V60W,LVQ PDF
Type Description
Series:DTMOSIV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):88.3W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DFN-EP (8x8)
Package / Case:4-VSFN Exposed Pad
TK10V60W,LVQ is available at GangBo-ic.com, Please review product page below for detailed information, including TK10V60W,LVQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK10V60W,LVQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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