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TSM026NA03CR RLG

TSM026NA03CR RLG

MOSFET N-CH 30V 168A 8PDFN

TSM026NA03CR RLG

TSM026NA03CR RLG

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Part No :

TSM026NA03CR RLG

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 30V 168A 8PDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14850 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
TSM026NA03CR RLG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:168A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2540 pF @ 15 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN
TSM026NA03CR RLG is available at GangBo-ic.com, Please review product page below for detailed information, including TSM026NA03CR RLG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM026NA03CR RLG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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