English
简体中文
MOSFET N-CH 30V 168A 8PDFN
KIT EVAL FOR 4273 RF SWITCH
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 168A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 2.6mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 41 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2540 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 125W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-PDFN (5x6) |
| Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
IPP65R095C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO220-3 |
|
MTM761100LBFPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |
|
CMUDM8005 TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 650MA SOT523 |
|
TPHR8504PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
STF6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A TO220FP |
|
SIHP23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO220AB |
|
TK4A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A TO220SIS |
|
IPW65R080CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 43.3A TO247-3 |
|
UJ3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
SPB11N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
FQP7N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO220-3 |
|
BSC886N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB FP |