MOSFET N-CHANNEL 700V 6A TO251
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 750mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 555 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 (IPAK) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPA65R095C7XKSA1Rochester Electronics |
MOSFET N-CH 650V 12A TO220-FP |
|
RQ3L050GNTBROHM Semiconductor |
MOSFET N-CHANNEL 60V 12A 8HSMT |
|
IRFP450APBFVishay / Siliconix |
MOSFET N-CH 500V 14A TO247-3 |
|
SIHD3N50DT4-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
IRFB38N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 43A TO220AB |
|
SI4800BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A 8SO |
|
NVGS4111PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.7A 6TSOP |
|
TK13A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 13A TO220SIS |
|
FDP032N08Rochester Electronics |
120A, 75V, 0.0032OHM, N CHANNEL |
|
IXFP72N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 72A TO220AB |
|
SQJA88EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 |
|
IRFIB7N50APBFVishay / Siliconix |
MOSFET N-CH 500V 6.6A TO220-3 |
|
IPA60R400CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.3A TO220-FP |