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IRFIB7N50APBF

IRFIB7N50APBF

MOSFET N-CH 500V 6.6A TO220-3

0009503151

0009503151

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AT93C46D-TH-T

IC EEPROM 1KBIT SPI 2MHZ 8TSSOP

KD1205PHB3.(2).GN.C1500

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IRFIB7N50APBF

IRFIB7N50APBF

Image is for reference, please contact us to get the real picture

Part No :

IRFIB7N50APBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 6.6A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10949 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IRFIB7N50APBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1423 pF @ 25 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Full Pack, Isolated Tab
IRFIB7N50APBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFIB7N50APBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFIB7N50APBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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