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SI4800BDY-T1-GE3

SI4800BDY-T1-GE3

MOSFET N-CH 30V 6.5A 8SO

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SI4800BDY-T1-GE3

SI4800BDY-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI4800BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 6.5A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14508 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI4800BDY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4800BDY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4800BDY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4800BDY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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