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IPA65R095C7XKSA1

IPA65R095C7XKSA1

MOSFET N-CH 650V 12A TO220-FP

IPA65R095C7XKSA1

IPA65R095C7XKSA1

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Part No :

IPA65R095C7XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 12A TO220-FP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10523 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPA65R095C7XKSA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.14 pF @ 400 V
FET Feature:-
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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