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SIR106ADP-T1-RE3

SIR106ADP-T1-RE3

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Part No :

SIR106ADP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 16.1A/65.8 PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16105 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16.1A (Ta), 65.8 (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2440 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
SIR106ADP-T1-RE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIR106ADP-T1-RE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIR106ADP-T1-RE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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