CAP CER 0.012UF 16V C0G/NP0 1206
MOSFET N-CH 30V 10A 8VSOF
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 13.2mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.8 nC @ 5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1.1 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSOF |
Package / Case: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSC050N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 16A/100A TDSON |
|
SQJA86EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
RQ3E100BNTBROHM Semiconductor |
MOSFET N-CH 30V 10A 8HSMT |
|
FQU1N50TURochester Electronics |
MOSFET N-CH 500V 1.1A IPAK |
|
RJK0236DPA-00#J5ARochester Electronics |
MOSFET N-CH 25V 50A 8DFN |
|
FDT86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.6A SOT223-4 |
|
IRF7606TRIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A MICRO8 |
|
CSD18535KCSTexas Instruments |
MOSFET N-CH 60V 200A TO220-3 |
|
FCI11N60Rochester Electronics |
MOSFET N-CH 600V 11A I2PAK |
|
FQI2P25TURochester Electronics |
MOSFET P-CH 250V 2.3A I2PAK |
|
DMN6140L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
DMT6013LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10A 6UDFN |
|
BUK7M27-80EXNexperia |
MOSFET N-CH 80V 30A LFPAK33 |