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FQU1N50TU

FQU1N50TU

MOSFET N-CH 500V 1.1A IPAK

IDSD-20-D-21.50-G

IDSD-20-D-21.50-G

INSULATION DISPLACEMENT TERMINAL

FQU1N50TU

FQU1N50TU

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Part No :

FQU1N50TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 1.1A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12056 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQU1N50TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 550mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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