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RQ3E100BNTB

RQ3E100BNTB

MOSFET N-CH 30V 10A 8HSMT

RQ3E100BNTB

RQ3E100BNTB

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Part No :

RQ3E100BNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 10A 8HSMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
RQ3E100BNTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
RQ3E100BNTB is available at GangBo-ic.com, Please review product page below for detailed information, including RQ3E100BNTB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ3E100BNTB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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