POWER FIELD-EFFECT TRANSISTOR, 1
IC SRAM 256KBIT PARALLEL 128TQFP
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 63 nC @ 10 V |
Vgs (Max): | +30V, -20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.659 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFK220N15PWickmann / Littelfuse |
MOSFET N-CH 150V 220A TO264AA |
|
FDD5N50UTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3A DPAK |
|
IRFZ20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 50V 15A TO220AB |
|
NTD4404N1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP12P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 11.5A TO220-3 |
|
IPLK80R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET 800V TDSON-8 |
|
STP110N8F7STMicroelectronics |
MOSFET N-CH 80V 80A TO220 |
|
FDC2512Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 1.4A SUPERSOT6 |
|
AOWF7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO262F |
|
PSMN2R9-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
SUP70040E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO220AB |
|
BUK7Y08-40B,115Nexperia |
MOSFET N-CH 40V 75A LFPAK56 |
|
MCH6341-TL-HRochester Electronics |
MOSFET P-CH 30V 5A 6MCPH |