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PSMN4R3-80ES,127

PSMN4R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

PSMN4R3-80ES,127

PSMN4R3-80ES,127

Image is for reference, please contact us to get the real picture

Part No :

PSMN4R3-80ES,127

Manufacturer
Rochester Electronics
Description
ELEMENT, NCHANNEL, SILICON, MOSF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10540 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
PDF
PSMN4R3-80ES,127 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.161 pF @ 40 V
FET Feature:-
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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