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SI2302DS,215

SI2302DS,215

SMALL SIGNAL FIELD-EFFECT TRANSI

SI2302DS,215

SI2302DS,215

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Part No :

SI2302DS,215

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Catalog
Transistors - FETs, MOSFETs - Single
Availability
57446 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
PDF
SI2302DS,215 PDF
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:650mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 10 V
FET Feature:-
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB (SOT23)
Package / Case:TO-236-3, SC-59, SOT-23-3
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